Xingquan
Zou, Mi He, Daniel Springer, Dongwook Lee, Saritha K. Nair, Siew Ann
Cheong, Tom Wu, C. Panagopoulos, D. Talbayev, and Elbert E. M. Chia
Department of Physics and Engineering Physics, 2001 Percival Stern Hall, 6400 Freret street, New Orleans, Louisiana 70118, USA
AIP Advances 2, 012120 (2012); http://dx.doi.org/10.1063/1.3679725
Abstract
We present
THz conductivity of LaAlO3 (LAO) as a function of temperature and annealing,
using terahertz time-domain spectroscopy (THz-TDS). We observed that, after
annealing, spectral weight redistribution occurs, such that the real
conductivity σ1(ω) changed from a featureless and almost frequency-independent
spectrum, into one where peaks occur near the phonon frequencies. These phonon
frequencies increase with increasing temperature. We attribute the appearance
of these absorption peaks to the diffusion and relocation of oxygen vacancies.
The dielectric functions of annealed LAO are well fitted with the Drude-Lorentz
model.
from the paper
"........Our work fills this gap in knowledge, enabling future
researchers to use the temperature-dependent refractive index of LAO to
characterize their thin films more accurately. Here we report the
temperature-dependent (10 K ‐ 300 K) dielectric response of LAO by terahertz time-domain spectroscopy
(THz-TDS) from 0.2 THz − 3 THz. After annealing, strong absorption peaks appear
in k(ω), with peak positions shifting to higher frequencies with increasing
temperature.
Our investigated samples are single crystals of (100) LAO: a 10×10×1 mm3 piece from CrysTec
GmbH (Berlin, Germany), and a 10×10×0.5 mm3 piece from SWI (Hsinchu, Taiwan). Since
both samples give the similar results, we only show data from the CrysTec
sample. The dielectric response of LAO was measured by a commercial THz-TDS system (TeraView Spectra 3000). .........."