Friday, 24 February 2012

Properties of InxGa1−xN films in terahertz range

A. Gauthier-Brun1,2, J. H. Teng1, E. Dogheche2, W. Liu1, A. Gokarna2, M. Tonouchi3, S. J. Chua1, and D. Decoster2
1Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 3 Research link, Singapore 117602, Singapore
2Institute of Electronics, Microelectronics and Nanotechnology, UMR-CNRS 8520, Avenue Poincaré, 59652 Villeneuve d’Ascq Cedex, France
3Institute of Laser Engineering, Osaka University, 2-6 Yamada-Oka, Suita-City, Osaka 565-0871, Japan                         

Abstract
In this letter, we report the characterization of the refractive indices and complex conductivities of a set of GaN films with different carrier concentrations, InN film, and InxGa1−xN films with indium content varying from x = 0.07 to x = 0.14 grown by metalorganic chemical vapor deposition for frequencies ranging from 0.3 to 3 THz using terahertz time-domain spectroscopy (THz-TDS). The refractive indices of InxGa1−xN films at THz range are reported. The carrier density and mobility determined using THz-TDS method show good agreement with four-probe Hall measurements.

Appl. Phys. Lett. 100, 071913 (2012)

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The data was obtained using TeraView's Spectra 3000.

"The THz- TDS data are obtained using a TeraView Spectra 3000 system, in which the THz wave is generated by focusing a mode-locked Ti:sapphire laser beam with a wavelength of 800 nm and pulse width of 100 fs onto a low temperature- grown GaAs photoconductive ..."