Alyabyeva, L. N., E. S. Zhukova, M. A. Belkin, and B. P. Gorshunov. "Dielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region." Scientific Reports 7 (2017).
Abstact
We report the values and the spectral dependence of the real and imaginary parts of the dielectric permittivity of semi-insulating Fe-doped InP crystalline wafers in the 2–700 cm−1 (0.06–21 THz) spectral region at room temperature. The data shows a number of absorption bands that are assigned to one- and two-phonon and impurity-related absorption processes. Unlike the previous studies of undoped or low-doped InP material, our data unveil the dielectric properties of InP that are not screened by strong free-carrier absorption and will be useful for designing a wide variety of InP-based electronic and photonic devices operating in the terahertz spectral range.
......The measurements of the dielectric properties in the ν = 0.21–3.00 THz range (7–100 cm−1) were performed using a pulsed THz TeraView TPS-Spectra-3000 time-domain spectrometer....
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For full paper see
https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5544691/
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