Wednesday, 22 August 2012

Improved Electrical Property of Sb-Doped SnO2 Nanonets as Measured by Contact and Non-Contact Approaches


Junpeng Lu ,  Liu Hongwei ,  Sun Cheng ,  Zheng Minrui ,  Lim Kim Yong ,  Nirpan Mathews ,  Subodh G. Mhaisalkar ,  Tang Sing Hai,  Zhang Xinhai and Sow Chorng Haur


RSC Adv., 2012, Accepted Manuscript

DOI: 10.1039/C2RA20973J

Abstract

This work reports the characterization of antimony doping effect on the electron transportation in SnO2 nanonets via a contact (field-effect transistor) and a non-contact (terahertz time-domain spectroscopy) approach. The doping influence is well demonstrated by the contact method through exploring the output characteristics of the devices. In addition, through the analysis of the terahertz time-domain spectra using Drude-Smith model, the non-contact method provides more precise characterization ascribed to the absence of extra effects such as contact resistance and nanowire-nanowire junction barriers.


....... The transmission terahertz spectra were carried out using a conventional THz-TDS system (TeraView Spectra 3000). The 100 fs optical pulses centered at 800 nm with repetition rate of 76 MHz ...



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