Wednesday, 22 August 2012

Improved Electrical Property of Sb-Doped SnO2 Nanonets as Measured by Contact and Non-Contact Approaches


Junpeng Lu  Liu Hongwei  Sun Cheng  Zheng Minrui  Lim Kim Yong  Nirpan Mathews  Subodh G. Mhaisalkar  Tang Sing Hai Zhang Xinhai and Sow Chorng Haur


RSC Adv., 2012, Accepted Manuscript

DOI: 10.1039/C2RA20973J

Abstract

This work reports the characterization of antimony doping effect on the electron transportation in SnO2 nanonets via a contact (field-effect transistor) and a non-contact (terahertz time-domain spectroscopy) approach. The doping influence is well demonstrated by the contact method through exploring the output characteristics of the devices. In addition, through the analysis of the terahertz time-domain spectra using Drude-Smith model, the non-contact method provides more precise characterization ascribed to the absence of extra effects such as contact resistance and nanowire-nanowire junction barriers.


....... The transmission terahertz spectra were carried out using a conventional THz-TDS system (TeraView Spectra 3000). The 100 fs optical pulses centered at 800 nm with repetition rate of 76 MHz ...