Kim, Dasol, Soobin Hwang, Taek Sun Jung, Min Ahn, Jaehun Jeong, Hanbum Park, Juhwan Park, Jae Hoon Kim, Byung Joon Choi, and Mann-Ho Cho. "Spatially inhomogeneous operation of phase-change memory." Applied Surface Science (2022): 153026.
for full paper see https://www.sciencedirect.com/science/article/abs/pii/S0169433222005931
Abstract
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Rapid changes in the electrical
resistance depending on the phases (amorphous and crystal) are one of the most
promising bases for universal memory. Phase-change region is spatially
inhomogeneous during memory operation in a unit cell because Joule heat for the
phase-change is generated at the interface between the metal and compounds.
However, delicate optimization of the electrical and thermal properties at the
interface is underexplored compared to the bulk. In this study, we modulate the
electrical and thermal conductivities by incorporating oxygen in Ag-In-Sb-Te,
superior memory compounds where oxygen is chosen for high accessibility and
efficiency for the modulation of conductivity. We further analyze the oxidation
and crystallization process at the atomic level. Based on the results, we
successfully improve the memory performances such as speed, energy, signal
ratio, and reliability simultaneously by inserting the oxygenated layer as an
interfacial layer. Our study proves that there is considerable room to optimize
memory performance at the interface.Experimental
… The optical
conductivities of AIST with various thicknesses were obtained from THz-TDS using a Teraview TPS3000 under a N 2 purged state. The
time-domain signal after sample transmission has the information of the sample
conductivity.....