Terahertz conductivity of topological surface states in Bi1.5Sb0.5Te1.8Se1.2
Chi Sin Tang, Bin Xia, Xingquan Zou, Shi Chen,
Hong-Wei Ou, Lan Wang, A. Rusydi, Jian-Xin Zhu& Elbert E. M. Chia
Division
of Physics and Applied Physics, School of Physical and Mathematical Sciences,
Nanyang Technological University, Singapore 637371, Singapore,
NUSNNI-NanoCore,
Department of Physics, National University of Singapore, 117542, Singapore,
Theoretical
Division and Center for Integrated Nanotechnologies, Los Alamos National
Laboratory, Los Alamos NM87545, USA.
Scientific
Reports 3, 3513 doi:10.1038/srep03513
Abstract
Topological insulators are electronic
materials with an insulating bulk and conducting surface. However, due to free
carriers in the bulk, the properties of the metallic surface are difficult to
detect and characterize in most topological insulator materials. Recently, a
new topological insulator Bi1.5Sb0.5Te1.7Se1.3
(BSTS) was found, showing high bulk resistivities of 1–10 Ω.cm and greater contrast between the bulk and surface resistivities
compared to other Bi-based topological insulators. Using Terahertz Time-Domain
Spectroscopy (THz-TDS), we present complex conductivity of BSTS single
crystals, disentangling the surface and bulk contributions. We find that the
Drude spectral weight is 1–2 orders of magnitude smaller than in other Bi-based
topological insulators, and similar to that of Bi2Se3
thin films, suggesting a significant contribution of the topological surface
states to the conductivity of the BSTS sample. Moreover, an impurity band is
present about 30 meV below the Fermi level, and the surface and bulk carrier
densities agree with those obtained from transport data. Furthermore, from the
surface Drude contribution, we obtain a ~98% transmission through one surface
layer — this is consistent with the transmission through single-layer or
bilayer graphene, which shares a common Dirac-cone feature in the band
structure.
For full paper see http://www.nature.com/srep/2013/131217/srep03513/pdf/srep03513.pdf
THz-TDS
THz transmission of
the BSTS single crystal was measured using a conventional THz-TDS system
(TeraView Spectra 3000) incorporated with a Janis ST-100-FTIR cryostat. The THz
signal was generated and detected by photoconductive antennae fabricated on low
temperature-grown GaAs films. The aperture diameter is 3.5 mm, allowing for an
accurate measurement of the THz signal down to ~0.4 THz. The time-domain
electric field of the THz pulse signal is transmitted through the BSTS sample , while the reference signal is transmitted through vacuum. 1800 THz traces
were taken in 60 seconds for each reference or sample run. The sample holder
was moved back and forth between the sample and reference positions by means of
a vertical motorized stage with a resolution of 2.5 μm. Fast Fourier
Transform (FFT) was then performed on the time-domain THz signal to obtain the
amplitude and phase of the THz spectra. Since the THz-TDS detects both the
amplitude and phase of the THz signal, there is no need to use the
Kramers-Kronig transformation to extract the real and imaginary components of
the material optical parameters.
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